Physical analysis and modeling of plasma etching mechanism for ULSI applicationKANOH, M; ONOUE, S; NISHITANI, K et al.Proceedings - Electrochemical Society. 2003, pp 421-433, issn 0161-6374, isbn 1-56677-376-8, 13 p.Conference Paper

Predictable topography simulation of SiO₂ etching by C₅F₈ gas combined with a plasma simulation, sheath model and chemical reaction modelTAKAGI, S; ONOUE, S; IYANAGI, K et al.Plasma sources science & technology (Print). 2003, Vol 12, Num 4, pp S64-S71, issn 0963-0252Article